FJV4106RMTF
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi PNP Pre-Biased Transistor, Part Number FJV4106RMTF. This SOT-23-3 packaged bipolar junction transistor (BJT) features integrated base resistors (R1: 10 kOhms, R2: 47 kOhms) for simplified circuit design. With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, it offers a transition frequency of 200 MHz. The device has a maximum power dissipation of 200 mW and a saturation voltage of 300 mV at 500 µA base current and 10 mA collector current. Its typical DC current gain (hFE) is 68 at 5 mA collector current and 5 V collector-emitter voltage, with a collector cutoff current of 100 nA. This component is utilized in industrial and consumer electronics applications. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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