FJV4105RMTF
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJV4105RMTF, a PNP pre-biased bipolar junction transistor, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. This surface-mount device, packaged in a SOT-23-3, features integrated base resistors (R1 = 4.7 kOhms, R2 = 10 kOhms) for simplified circuit design. With a transition frequency of 200 MHz and a power dissipation of 200 mW, it is suitable for applications in industrial automation, consumer electronics, and communication systems. The transistor exhibits a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage. Collector cutoff current (ICBO) is rated at 100nA. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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