FJV4104RMTF
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi PNP Pre-Biased Transistor, part number FJV4104RMTF, is a surface mount device in a SOT-23-3 package. This component operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features an integrated base resistor (R1) of 47 kOhms and an emitter-base resistor (R2) of 47 kOhms, facilitating simplified circuit design by eliminating external bias components. The transistor exhibits a transition frequency of 200 MHz and a power dissipation of 200mW. Typical DC current gain (hFE) is 68 at 5mA collector current and 5V Vce. This device finds application in general purpose switching and amplification circuits, particularly in consumer electronics and industrial control systems. The FJV4104RMTF is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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