FJV4103RMTF
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
The onsemi FJV4103RMTF is a PNP pre-biased bipolar transistor designed for surface mount applications. This component, packaged in a SOT-23-3 (TO-236-3, SC-59) configuration, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors (R1 = 22 kOhms, R2 = 22 kOhms), simplifying circuit design and reducing component count. With a transition frequency of 200 MHz and a power dissipation of 200 mW, this transistor is suitable for general-purpose switching and amplification in industrial and consumer electronics. The minimum DC current gain (hFE) is 56 at 5mA collector current and 5V Vce. The Vce saturation is 300mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
Request a Quote
Clients Also Buy
MMUN2111LT1
TRANS BRT PNP 100MA 50V SOT23
FJY3006R
TRANS PREBIAS NPN 50V SC89-3
MUN5234T1
TRANS PREBIAS NPN 50V SC70-3
