FJV3114RMTF
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJV3114RMTF is a pre-biased NPN bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. The integrated base resistors are R1 at 4.7 kOhms and R2 at 47 kOhms, providing a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V Vce. The saturation voltage (Vce Sat) is 300mV at 500µA base current and 10mA collector current. This device is supplied in a SOT-23-3 package and is available on tape and reel. It finds application in various electronic circuits where a small signal NPN transistor with built-in biasing is required, including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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