FJV3112RMTF
TRANS PREBIAS NPN 40V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJV3112RMTF, an NPN Pre-Biased Bipolar Transistor (BJT), offers a 40V collector-emitter breakdown voltage and a maximum collector current of 100mA. This device features an internal base resistor (R1) of 47 kOhms, simplifying circuit design and reducing component count. With a transition frequency of 250 MHz and a power dissipation of 200 mW, the FJV3112RMTF is suitable for applications requiring precise switching and amplification. The transistor type is NPN - Pre-Biased, and it provides a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V Vce. The saturation voltage (Vce Sat) is a maximum of 300mV at 1mA base current and 10mA collector current. This component is supplied in a SOT-23-3 surface mount package, delivered on tape and reel. The FJV3112RMTF is commonly utilized in industrial, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
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