FJV3109RMTF
TRANS PREBIAS NPN 40V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJV3109RMTF is an NPN pre-biased bipolar transistor designed for surface mount applications within a SOT-23-3 package. This component offers a collector-emitter breakdown voltage of 40 V and a maximum collector current of 100 mA. Featuring an integrated base resistor (R1) of 4.7 kOhms, it simplifies circuit design by eliminating the need for external biasing components. The transistor exhibits a minimum DC current gain (hFE) of 100 at 1 mA collector current and 5 V Vce, with a transition frequency of 250 MHz. Power dissipation is rated at 200 mW. Applications for this device include general-purpose switching and amplification in consumer electronics, industrial control systems, and communications infrastructure. The FJV3109RMTF is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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