FJV3104RMTF
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJV3104RMTF is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 and R2, are specified at 47 kOhms each, facilitating simplified circuit design. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, the FJV3104RMTF offers a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V Vce. The saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. The transistor type is NPN - Pre-Biased, and it is supplied in a SOT-23-3 package, also known as TO-236-3 or SC-59. This component is commonly utilized in industrial automation, consumer electronics, and communication systems. The product is supplied in Digi-Reel® packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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