FJV3101RMTF
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJV3101RMTF is a pre-biased NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of up to 50V and a maximum collector current of 100mA. It offers a transition frequency of 250MHz and a power dissipation rating of 200mW. The device integrates internal base resistors (R1 = 4.7 kOhms) and emitter base resistors (R2 = 4.7 kOhms), simplifying circuit design by eliminating the need for external biasing components. The SOT-23-3 package facilitates high-density board layouts. The FJV3101RMTF is commonly employed in general-purpose switching and amplification circuits across various industrial and consumer electronics sectors. The minimum DC current gain (hFE) is specified at 20 at 10mA collector current and 5V collector-emitter voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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