FJNS4204RBU
TRANS PREBIAS PNP 50V TO92SManufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJNS4204RBU is a PNP pre-biased bipolar junction transistor (BJT) designed for applications requiring minimal external components. This device features integrated base resistors (R1 = 47 kOhms, R2 = 47 kOhms) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is rated at 200MHz, with a power dissipation of 300mW. The DC current gain (hFE) is a minimum of 68 at 5mA collector current and 5V Vce. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. This component is supplied in a TO-92S package, suitable for through-hole mounting. The FJNS4204RBU finds utility in various industrial and consumer electronics, including logic circuits and simple switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92S |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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