FJNS3201RTA
TRANS PREBIAS NPN 50V TO92SManufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
onsemi FJNS3201RTA is an NPN pre-biased bipolar transistor featuring integrated base resistors. This TO-92S packaged component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 300mW, it is suitable for general-purpose switching and amplification applications. The internal base resistors are rated at 4.7 kOhms for both R1 and R2, simplifying circuit design. Typical DC current gain (hFE) is 20 at 10mA collector current and 5V Vce. The saturation voltage (Vce) is a maximum of 300mV at 500µA base current and 10mA collector current. This device is presented in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V |
| Supplier Device Package | TO-92S |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
Request a Quote
Clients Also Buy
MMUN2111LT1
TRANS BRT PNP 100MA 50V SOT23
FJY3006R
TRANS PREBIAS NPN 50V SC89-3
MUN5234T1
TRANS PREBIAS NPN 50V SC70-3
