FJN4305RBU
TRANS PREBIAS PNP 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJN4305RBU is a PNP pre-biased bipolar junction transistor designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 300mW, it is suitable for use in consumer electronics, industrial control systems, and communication equipment. The device is housed in a standard TO-92-3 through-hole package. Integrated base resistors include R1 at 4.7 kOhms and R2 at 10 kOhms, simplifying circuit design. Its DC current gain (hFE) is a minimum of 30 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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