FJN4304RTA
TRANS PREBIAS PNP 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJN4304RTA is a PNP pre-biased bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a transition frequency of 200MHz and a power dissipation of 300mW. The internal base resistors are specified as R1 at 47 kOhms and R2 at 47 kOhms, providing a typical DC current gain (hFE) of 68 at 5mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is rated at a maximum of 300mV at 500µA base current and 10mA collector current. The FJN4304RTA is suitable for applications in consumer electronics and industrial control systems. Packaging is provided on Tape & Box (TB).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |