FJN4303RBU
TRANS PREBIAS PNP 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJN4303RBU is a PNP pre-biased bipolar junction transistor designed for general-purpose switching and amplification applications. This component features integrated base resistors, eliminating the need for external biasing components. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 200MHz. The device has a power dissipation of 300mW and is supplied in a TO-92-3 through-hole package. Key electrical characteristics include a minimum DC current gain (hFE) of 56 at 5mA collector current and 5V Vce, and a saturation voltage of 300mV at 500µA base current and 10mA collector current. The internal base resistors are R1 = 22 kOhms and R2 = 22 kOhms. This transistor is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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