FJN4302RTA
TRANS PREBIAS PNP 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJN4302RTA is a PNP pre-biased bipolar transistor housed in a TO-92-3 package. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. Featuring an internal base resistor (R1) of 10kO and an emitter-base resistor (R2) of 10kO, it simplifies circuit design by eliminating the need for external biasing components. With a transition frequency of 200MHz and a maximum power dissipation of 300mW, the FJN4302RTA is suitable for applications in industrial control, consumer electronics, and general-purpose amplification. The device exhibits a saturation voltage of 300mV at 500µA base current and 10mA collector current, and a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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