FJN3314RTA
TRANS PREBIAS NPN 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
The onsemi FJN3314RTA is an NPN pre-biased bipolar transistor designed for general-purpose switching and amplification applications. This component features integrated base biasing resistors (R1 = 4.7 kOhms, R2 = 47 kOhms), simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor has a transition frequency of 250 MHz and a maximum power dissipation of 300 mW. With a DC current gain (hFE) of at least 68 at 5 mA and 5 V, it provides reliable amplification. The device is housed in a TO-92-3 package, suitable for through-hole mounting. Applications include consumer electronics, industrial automation, and power management circuits. The FJN3314RTA is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
MMUN2111LT1
TRANS BRT PNP 100MA 50V SOT23
FJY3006R
TRANS PREBIAS NPN 50V SC89-3
MUN5234T1
TRANS PREBIAS NPN 50V SC70-3
