FJN3306RTA
TRANS PREBIAS NPN 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJN3306RTA is an NPN pre-biased bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250 MHz and a maximum power dissipation of 300mW, it is suitable for applications requiring simple switching and amplification. The integrated base biasing resistors, R1 (10 kOhms) and R2 (47 kOhms), simplify circuit design by eliminating the need for external biasing components. Key electrical characteristics include a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V Vce, and a Vce saturation of 300mV at 500µA base current and 10mA collector current. The device exhibits a low collector cutoff current of 100nA (ICBO). This transistor is commonly utilized in consumer electronics, industrial control systems, and general-purpose switching applications. It is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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