FJN3306RBU
TRANS PREBIAS NPN 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJN3306RBU is an NPN pre-biased bipolar transistor packaged in a TO-92-3 (TO-226-3) through-hole configuration. This component features a collector-emitter breakdown voltage (Vce) of 50V, a maximum collector current (Ic) of 100mA, and a transition frequency of 250MHz. It includes integrated base resistors R1 (10 kOhms) and R2 (47 kOhms), simplifying circuit design by eliminating external biasing components. The device offers a minimum DC current gain (hFE) of 68 at 5mA, 5V. With a maximum power dissipation of 300mW and a Vce saturation of 300mV at 500µA, 10mA, the FJN3306RBU is suitable for applications in consumer electronics and industrial control systems requiring compact switching and amplification solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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