FJN3305RTA
TRANS PREBIAS NPN 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJN3305RTA is an NPN pre-biased bipolar transistor designed for general-purpose switching and amplification applications. This component features integrated base resistors, R1 (4.7 kOhms) and R2 (10 kOhms), simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation rating of 300mW. The transistor exhibits a transition frequency of 250 MHz. Packaged in a TO-92-3 (TO-226-3) through-hole configuration and supplied on cut tape, the FJN3305RTA is suitable for use in consumer electronics and industrial control systems. DC current gain (hFE) is specified at a minimum of 30 at 5mA collector current and 5V collector-emitter voltage. Collector cutoff current is a maximum of 100nA (ICBO). Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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