FJN3305RBU
TRANS PREBIAS NPN 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJN3305RBU is an NPN pre-biased bipolar transistor for through-hole mounting in a TO-92-3 package. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Featuring an integrated base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 10 kOhms, this device simplifies circuit design by eliminating external bias components. The transistor exhibits a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V Vce, with a transition frequency of 250MHz. Its maximum power dissipation is 300mW. Applications include general-purpose switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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