FJN3304RTA
TRANS PREBIAS NPN 50V TO92-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The FJN3304RTA from onsemi is an NPN pre-biased bipolar junction transistor (BJT). This through-hole component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a DC current gain (hFE) of 68 minimum at 5 mA and 5 V, and a transition frequency of 250 MHz, it is suitable for a range of applications. The transistor has a maximum power dissipation of 300 mW. Integrated base resistors (R1 = 47 kOhms) and emitter-base resistors (R2 = 47 kOhms) simplify circuit design by eliminating the need for external biasing components. The device is supplied in a TO-92-3 package, presented in tape and box packaging. This component finds use in industrial and consumer electronics, particularly in switching and amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |