DTC144TT1G
TRANS PREBIAS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTC144TT1G is an NPN transistor featuring integrated bias resistors, simplifying circuit design by eliminating external components. This pre-biased bipolar junction transistor (BJT) is specified for a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a typical DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The device has a maximum power dissipation of 230mW and a Vce(sat) of 250mV at 1mA base current and 10mA collector current. The integrated base resistor (R1) is 47 kOhms. Encased in a compact SC-59 (TO-236-3) surface-mount package, the DTC144TT1G is supplied on tape and reel. Applications include digital logic, switching, and general-purpose amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 47 kOhms |
| Qualification | - |
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