DTC143TET1
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTC143TET1 is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mounting in the SC-75 (SOT-416) package. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It incorporates an integrated base resistor (R1) of 4.7 kOhms, simplifying circuit design and reducing component count. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5 mA collector current and 10 V Vce. Power dissipation is rated at 200 mW. The Vce saturation voltage is specified at a maximum of 250 mV for 1 mA base current and 10 mA collector current. This device is commonly utilized in various industrial applications, including digital logic circuits and switching applications. The DTC143TET1 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Qualification | - |
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