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DTC124XM3T5G

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DTC124XM3T5G

TRANS PREBIAS NPN 50V SOT723

Manufacturer: onsemi

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

The onsemi DTC124XM3T5G is an NPN pre-biased bipolar transistor designed for surface mounting in a SOT-723 package. This component features a 50 V collector-emitter breakdown voltage and a maximum collector current of 100 mA, with a maximum power dissipation of 260 mW. The internal base resistors are specified as R1 = 22 kOhms and R2 = 47 kOhms. It exhibits a minimum DC current gain (hFE) of 80 at 5 mA collector current and 10 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 250 mV at 1 mA base current and 10 mA collector current. The cutoff current (Ic(max)) is rated at 500 nA. This transistor is commonly utilized in digital logic, switching applications, and general-purpose amplification across various industrial and consumer electronics sectors. The DTC124XM3T5G is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Supplier Device PackageSOT-723
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max260 mW
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)47 kOhms
Qualification-

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