DTC123TM3T5G
TRANS PREBIAS NPN 50V SOT723Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi DTC123TM3T5G is an NPN pre-biased bipolar transistor in a SOT-723 surface mount package. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a built-in base resistor (R1) of 2.2 kOhms, simplifying circuit design by eliminating the need for external biasing components. The transistor achieves a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. With a maximum power dissipation of 260mW, it is suitable for applications requiring compact, low-power switching and amplification. Typical industries utilizing this component include consumer electronics and industrial control systems. The device is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SOT-723 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 260 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Qualification | - |
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