DTC123JET1
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTC123JET1 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component, packaged in an SC-75 (SOT-416) case, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features an integrated base resistor (R1) of 2.2 kOhms and an emitter base resistor (R2) of 47 kOhms, simplifying circuit design by eliminating external biasing resistors. The device exhibits a minimum DC current gain (hFE) of 80 at 5 mA collector current and 10 V Vce. With a maximum power dissipation of 200 mW and a saturation voltage of 250 mV at 300 µA base current and 10 mA collector current, the DTC123JET1 is suitable for various switching and amplification circuits in automotive, industrial, and consumer electronics. The part is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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