DTC123EET1
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTC123EET1 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component, housed in an SC-75 (SOT-416) package, features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It is configured with internal base resistors, R1 and R2, both rated at 2.2 kOhms. The transistor exhibits a minimum DC current gain (hFE) of 8 at 5mA collector current and 10V Vce. With a maximum power dissipation of 200mW, it finds utility in digital logic circuits and general-purpose switching applications across various electronic systems. This device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Qualification | - |
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