DTC115EET1
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTC115EET1 is an NPN pre-biased bipolar junction transistor designed for surface mounting in the SC-75 (SOT-416) package. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistors, R1 at 100 kOhms and R2 at 100 kOhms, simplify circuit design by eliminating the need for external biasing components. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5 mA collector current and 10 V collector-emitter voltage, and a saturation voltage (Vce Sat) of 250 mV at 300 µA base current and 10 mA collector current. The device has a maximum power dissipation of 200 mW and a collector cutoff current of 500 nA. It is supplied in a Tape & Reel (TR) package. This pre-biased transistor finds application in various digital logic circuits and interface applications within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Qualification | - |
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