DTA143ZET1
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTA143ZET1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. Featuring an SC-75 (SOT-416) package, this component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It includes integrated base resistors, with R1 specified at 4.7 kOhms and R2 at 47 kOhms, facilitating simplified circuit design. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. With a maximum power dissipation of 200mW and a Vce saturation of 250mV at 1mA base and 10mA collector current, the DTA143ZET1 is suitable for various digital logic switching and interface applications across industrial and consumer electronics sectors. This component is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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