DTA143EET1
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTA143EET1 is a PNP pre-biased bipolar transistor designed for discrete applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistors, R1 and R2, are specified at 4.7 kOhms each, simplifying circuit design and reducing component count. With a maximum power dissipation of 200 mW, it is suitable for use in compact electronic designs. The transistor type is PNP with a pre-biased configuration, offering a minimum DC current gain (hFE) of 15 at 5 mA and 10 V. The Vce saturation is a maximum of 250 mV at 1 mA base current and 10 mA collector current. Encased in an SC-75, SOT-416 surface mount package, the DTA143EET1 is supplied on a tape and reel. This device finds application in areas such as consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Qualification | - |
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