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DTA123TM3T5G

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DTA123TM3T5G

TRANS PREBIAS PNP 50V SOT723

Manufacturer: onsemi

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

onsemi's DTA123TM3T5G is a PNP, pre-biased bipolar junction transistor designed for surface mount applications. This component features a 50 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. It boasts a significant DC current gain (hFE) of at least 160 at 5 mA collector current and 10 V Vce. The integrated base resistor (R1) is specified at 2.2 kOhms. With a 250 mW maximum power dissipation and a SOT-723 package, this device is suitable for applications requiring compact discrete switching and amplification. Typical industries utilizing this component include consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Supplier Device PackageSOT-723
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max260 mW
Resistor - Base (R1)2.2 kOhms
Qualification-

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