DTA123JM3T5G
TRANS PREBIAS PNP 50V SOT723Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi DTA123JM3T5G is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 260mW. It is supplied in a compact SOT-723 package, delivered on tape and reel. The internal base resistor (R1) is 2.2 kOhms and the emitter base resistor (R2) is 47 kOhms, providing a typical DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is specified at 250mV maximum for 300µA base current and 10mA collector current. This device is suitable for use in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-723 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 260 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |