DTA123JET1
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi DTA123JET1 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component, housed in an SC-75 (SOT-416) package, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features integrated base resistors, specifically R1 at 2.2 kOhms and R2 at 47 kOhms, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5 mA collector current and 10 V collector-emitter voltage. With a maximum power dissipation of 200 mW, it is suitable for applications requiring minimal component count and simplified biasing. This device is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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