DTA123EET1
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
onsemi DTA123EET1 is a PNP pre-biased bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This device features integrated base resistors, simplifying circuit design and reducing component count. With a collector emitter breakdown voltage (Vce) of 50 V and a maximum collector current (Ic) of 100 mA, it is suitable for low-power digital logic interfaces and signal conditioning. The transistor offers a minimum DC current gain (hFE) of 8 at 5 mA collector current and 10 V Vce. It is housed in an SC-75, SOT-416 surface-mount package, compatible with automated assembly processes. The power dissipation is rated at 200 mW. This component finds use in consumer electronics, industrial control systems, and automotive applications. The internal base resistors are R1 at 2.2 kOhms and R2 at 2.2 kOhms.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Qualification | - |
Request a Quote
Clients Also Buy
FJY3006R
TRANS PREBIAS NPN 50V SC89-3
MMUN2215LT1
TRANS PREBIAS NPN 50V SOT23-3
MUN2135T1G
TRANS PREBIAS PNP 50V 0.1A SC59
