DTA115TET1G
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTA115TET1G is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component, housed in an SC-75 (SOT-416) package, features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 160 specified at 5mA collector current and 10V collector-emitter voltage. The integrated base resistor (R1) is 100 kOhms, and the saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. With a maximum power dissipation of 200mW, this transistor is suitable for use in industrial and consumer electronics applications. It is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 100 kOhms |
| Qualification | - |
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