DTA115EET1
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi DTA115EET1 is a PNP pre-biased bipolar transistor designed for digital logic applications and switching circuits. This device features integrated base resistors (R1 = 100 kOhms, R2 = 100 kOhms), simplifying circuit design and reducing component count. It offers a collector current capability of 100 mA and a maximum power dissipation of 200 mW. The breakdown voltage (Vce) is rated at 50 V. With a surface mount SC-75 (SOT-416) package, it is suitable for high-density PCB designs. The typical DC current gain (hFE) is 80 at 5 mA collector current and 10 V Vce. This component is commonly utilized in consumer electronics, industrial control systems, and communication equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Qualification | - |
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