DTA114YET1
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
The onsemi DTA114YET1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications within the SC-75, SOT-416 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It includes integrated base resistors, specifically R1 at 10 kOhms and R2 at 47 kOhms, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. With a maximum power dissipation of 200mW and a saturation voltage (Vce Sat) of 250mV at 300µA base current and 10mA collector current, this device is suitable for use in various industrial and consumer electronics applications requiring simplified switching and logic functions. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
Request a Quote
Clients Also Buy
FJY3006R
TRANS PREBIAS NPN 50V SC89-3
MMUN2215LT1
TRANS PREBIAS NPN 50V SOT23-3
MUN2135T1G
TRANS PREBIAS PNP 50V 0.1A SC59
