DTA114TXV3T1G
TRANS PREBIAS PNP 50V SC89-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTA114TXV3T1G is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter voltage breakdown of 50V and a maximum collector current of 100mA. It offers a 200mW power dissipation and a base resistor (R1) value of 10 kOhms, simplifying circuit design by integrating the bias resistor. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. Its saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current. Packaged in an SC-89-3 (SOT-490) case, this device is suitable for use in consumer electronics and industrial control systems. The component is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-89-3 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 10 kOhms |
| Qualification | - |
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