DTA114TET1G
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi DTA114TET1G is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Featuring an integrated 10 kOhm base resistor (R1), it simplifies circuit design by eliminating the need for an external bias resistor. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. Its saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current, with a maximum collector cutoff current of 500nA. The DTA114TET1G is supplied in a compact SC-75, SOT-416 package and is delivered on a tape and reel for automated assembly. This device is suitable for use in various electronic systems, including digital logic circuits and signal switching applications. The maximum power dissipation is 200mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 10 kOhms |
| Qualification | - |
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