DTA114TET1
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi DTA114TET1 is a PNP pre-biased bipolar transistor designed for surface mount applications within the SC-75, SOT-416 package. This component offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. Featuring an integrated base resistor (R1) of 10 kOhms, it simplifies circuit design by eliminating the need for external biasing. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5 mA collector current and 10 V Vce. Saturation voltage is specified at a maximum of 250 mV at 1 mA base current and 10 mA collector current. The maximum power dissipation is 200 mW. This device finds application in areas such as digital logic, switching circuits, and general-purpose amplification. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-75, SOT-416 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 10 kOhms |
| Qualification | - |
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