TIG110BF
IGBT 600V 27A 2W TO220Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi TIG110BF is a Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 27A, with a pulsed current rating of 108A. The TIG110BF exhibits a low on-state voltage of 2V at 15V gate-emitter voltage and 15A collector current. Typical switching times are 65ns turn-on and 250ns turn-off at 300V, 15A, 30 Ohms, 15V. With a maximum power dissipation of 2W, this IGBT is housed in a TO-220FI(LS) package, suitable for through-hole mounting. It finds application in various industrial sectors including motor control and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
| Supplier Device Package | TO-220FI(LS) |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 65ns/250ns |
| Switching Energy | - |
| Test Condition | 300V, 15A, 30Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 27 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 108 A |
| Power - Max | 2 W |