The onsemi SHGTG40N60A4 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) from the SMPS series, designed for high-power switching applications. This through-hole component, packaged in a TO-247-3, offers a maximum collector power dissipation of 625W. Key electrical characteristics include a collector-emitter saturation voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 40A collector current. The device features a gate charge of 450 nC and exhibits switching times of 25ns turn-on and 145ns turn-off at 25°C. Switching energy is rated at 850µJ turn-on and 370µJ turn-off under test conditions of 390V, 40A, 2.2 Ohms, and 15V gate drive. The SHGTG40N60A4 is suitable for use in power supplies, industrial motor control, and other demanding power conversion systems, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: SMPSRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/145ns |
| Switching Energy | 850µJ (on), 370µJ (off) |
| Test Condition | 390V, 40A, 2.2Ohm, 15V |
| Gate Charge | 450 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 625 W |
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