SGW10N60RUFDTM
IGBT 600V 16A 75W D2PAKManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGW10N60RUFDTM is a 600V, 16A insulated gate bipolar transistor (IGBT) designed for demanding power switching applications. This device features a maximum collector power dissipation of 75W and a peak pulsed collector current capability of 30A, making it suitable for high-power density designs. The surface mount TO-263 (D2PAK) package facilitates efficient thermal management and automated assembly. Key performance parameters include a typical on-state voltage (Vce(on)) of 2.8V at 15V gate-emitter voltage and 10A collector current, with a gate charge of 30 nC. Switching characteristics are defined by a turn-on delay (Td(on)) of 15ns and turn-off delay (Td(off)) of 36ns (at 25°C, 300V, 10A, 20 Ohm, 15V), alongside a reverse recovery time (trr) of 60ns. This component is commonly employed in power factor correction (PFC) circuits, inverters, and motor control systems across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/36ns |
| Switching Energy | 141µJ (on), 215µJ (off) |
| Test Condition | 300V, 10A, 20Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 75 W |
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