SGS5N150UFTU
IGBT 1500V 10A 50W TO220FManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGS5N150UFTU is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1500V collector-emitter breakdown voltage and a continuous collector current rating of 10A (20A pulsed), with a maximum power dissipation of 50W. The TO-220F-3 package facilitates through-hole mounting. Key performance characteristics include a Vce(on) of 5.5V at 10V gate-source voltage and 5A collector current, with typical turn-on and turn-off delays of 10ns and 30ns respectively, measured at 600V, 5A, 10 Ohm, 10V. Switching energy is specified at 190µJ on and 100µJ off. The operating temperature range is -55°C to 150°C (TJ). This IGBT is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 5.5V @ 10V, 5A |
| Supplier Device Package | TO-220F-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 10ns/30ns |
| Switching Energy | 190µJ (on), 100µJ (off) |
| Test Condition | 600V, 5A, 10Ohm, 10V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 1500 V |
| Current - Collector Pulsed (Icm) | 20 A |
| Power - Max | 50 W |
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