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SGP23N60UFTU

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SGP23N60UFTU

IGBT 600V 23A TO220-3

Manufacturer: onsemi

Categories: Single IGBTs

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onsemi SGP23N60UFTU is a 600V, 23A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This through-hole component, packaged in a TO-220-3 configuration, offers a maximum collector power dissipation of 100W and a continuous collector current of 23A, with a pulsed current capability of 92A. It features a standard input type and operates across a wide temperature range of -55°C to 150°C (TJ). The IGBT exhibits a maximum on-state voltage (Vce(on)) of 2.6V at 15V gate-emitter voltage and 12A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 17ns and turn-off delay (Td(off)) of 60ns at 25°C, with switching energies of 115µJ (on) and 135µJ (off) under specified test conditions (300V, 12A, 23 Ohm, 15V). This device is commonly utilized in power supplies, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 12A
Supplier Device PackageTO-220-3
IGBT Type-
Td (on/off) @ 25°C17ns/60ns
Switching Energy115µJ (on), 135µJ (off)
Test Condition300V, 12A, 23Ohm, 15V
Current - Collector (Ic) (Max)23 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)92 A
Power - Max100 W

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