SGP23N60UFDTU
IGBT 600V 23A 100W TO220Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGP23N60UFDTU is a 600V, 23A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a maximum collector power dissipation of 100W and a collector current of 23A, with a pulsed collector current capability of 92A. The IGBT exhibits a Vce(on) of 2.6V at 15V gate-emitter voltage and 12A collector current, with a specified gate charge of 49 nC. Switching characteristics include typical turn-on delay (Td(on)) of 17ns and turn-off delay (Td(off)) of 60ns at 25°C, with switching energies of 115µJ (on) and 135µJ (off) under test conditions of 300V, 12A, 23 Ohm, and 15V. The SGP23N60UFDTU utilizes a standard input type and is packaged in a TO-220-3 through-hole configuration, operating across a temperature range of -55°C to 150°C. This component is commonly employed in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17ns/60ns |
| Switching Energy | 115µJ (on), 135µJ (off) |
| Test Condition | 300V, 12A, 23Ohm, 15V |
| Gate Charge | 49 nC |
| Current - Collector (Ic) (Max) | 23 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 92 A |
| Power - Max | 100 W |
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