SGP10N60RUFDTU
IGBT 600V 16A TO220-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGP10N60RUFDTU is a 600V, 16A Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This component features a collector current of 16A (30A pulsed) and a maximum power dissipation of 75W. Key electrical characteristics include a Vce(on) of 2.8V at 15V gate-emitter voltage and 10A collector current, with a gate charge of 30 nC. It offers a reverse recovery time of 60 ns and switching energies of 141µJ (on) and 215µJ (off) under specified test conditions (300V, 10A, 20 Ohm, 15V). The SGP10N60RUFDTU is housed in a TO-220-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This device is commonly employed in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/36ns |
| Switching Energy | 141µJ (on), 215µJ (off) |
| Test Condition | 300V, 10A, 20Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 75 W |
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