SGM2N60UFTF
IGBT 600V 2.4A 2.1W SOT-223Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi SGM2N60UFTF is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a continuous collector current (Ic) rating of 2.4A and a pulsed collector current (Icm) of 10A, making it suitable for demanding power management tasks. With a low on-state voltage (Vce(on)) of 2.6V at 1.2A and 15V gate drive, it minimizes conduction losses. The switching performance is characterized by a gate charge of 9 nC and switching energies of 30µJ (on) and 13µJ (off) at specified test conditions. Packaged in a compact SOT-223-4 (TO-261-4, TO-261AA) for surface mounting, the SGM2N60UFTF operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in power supplies, lighting, and motor control systems within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 1.2A |
| Supplier Device Package | SOT-223-4 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/80ns |
| Switching Energy | 30µJ (on), 13µJ (off) |
| Test Condition | 300V, 1.2A, 200Ohm, 15V |
| Gate Charge | 9 nC |
| Current - Collector (Ic) (Max) | 2.4 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 10 A |
| Power - Max | 2.1 W |
Request a Quote
Clients Also Buy
NGTB30N120LWG
IGBT 1200V 30A TO247
NGTB35N60FL2WG
IGBT TRENCH/FS 600V 70A TO247
FGD3245G2-F085
IGBT 450V 23A TO252AA
