Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

SGL60N90DG3YDTU

Banner
productimage

SGL60N90DG3YDTU

IGBT 900V 60A 180W TO264

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi SGL60N90DG3YDTU is a Trench IGBT designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 900 V and a continuous collector current capability of 60 A, with a pulsed current rating of 120 A. It offers a low on-state voltage (Vce(on)) of 2.7 V at 15 V gate-emitter voltage and 60 A collector current. The IGBT exhibits a gate charge of 260 nC and a typical reverse recovery time (trr) of 1.5 µs. With a maximum power dissipation of 180 W and an operating temperature range of -55°C to 150°C (TJ), it is housed in a TO-264-3 (TO-264AA) through-hole package. This device is suitable for use in industrial power supplies, motor control, and welding equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)1.5 µs
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 60A
Supplier Device PackageTO-264-3
IGBT TypeTrench
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge260 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)900 V
Current - Collector Pulsed (Icm)120 A
Power - Max180 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FGY160T65SPD-F085

650V FS GEN3 TRENCH IGBT

product image
NGD18N40CLBT4

IGBT 430V 15A DPAK

product image
NGTB60N60SWG

IGBT 600V 120A 298W TO247