SGL50N60RUFTU
IGBT 600V 80A 250W TO264Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGL50N60RUFTU is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 80A, with a pulsed current rating (Icm) of 150A. The SGL50N60RUFTU offers a maximum power dissipation of 250W and a low on-state voltage (Vce(on)) of 2.8V at 15V gate-emitter voltage and 50A collector current.
Optimized for efficient switching, it exhibits typical turn-on delay (Td(on)) of 26ns and turn-off delay (Td(off)) of 66ns at 25°C, with corresponding switching energies of 1.68mJ (on) and 1.03mJ (off). The gate charge is specified at 145nC. This IGBT is housed in a standard TO-264-3 (TO-264AA) through-hole package, suitable for robust mounting. Operating across a wide temperature range of -55°C to 150°C (TJ), the SGL50N60RUFTU finds application in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 50A |
| Supplier Device Package | TO-264-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 26ns/66ns |
| Switching Energy | 1.68mJ (on), 1.03mJ (off) |
| Test Condition | 300V, 50A, 5.9Ohm, 15V |
| Gate Charge | 145 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 250 W |
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